Place of Origin: | China |
Brand Name: | OEM |
Certification: | ISO9001 |
Minimum Order Quantity: | Negotiable |
---|---|
Price: | Negotiable |
Packaging Details: | 100g/bag or single wafer box packaging. |
Delivery Time: | 5-7 working days after received your payment details working days after received your payment details |
Payment Terms: | T/T, Western Union, L/C |
Growth Method: | CZ | Dielectric Constant: | ~17 |
---|---|---|---|
Chemical Stability: | Insoluble In Water | Density: | 5.92 G/cm3 |
Melt Point: | 1650 °C | Surface: | One Side Polished Or Both Sides Polished |
High Light: | silicon wafer substrate,silicon oxide wafer |
SrLaAlO4 single crystal substrate with thermal expansion coefficient
Breif intruduction of SrLaAlO4 single crystal substrate
SrLaAlO4 single crystal substrate has no luan crystal and phase transition from the melting point to low temperature.
It has the same structure with high temperature superconductor YBCO.
Thermal expansion coefficient is lower than other perovskite structure crystals.
Can deposition film to improve lattice mismatch and reduce stress.
Typical Physical Properties of SrLaAlO4 single crystal substrate
Crystal Structure | Trtragonal | |||
a=3.756Å | ||||
b=3.756Å | ||||
c=12.630Å | ||||
Growth Method | CZ | |||
Density | 5.92 g/cm3 | |||
Melt Point | 1650 °C | |||
Hardness | 6 (Mohn) | |||
Dielectric Constant | ~17 | |||
Chemical Stability | Insoluble in water |
Standard size of SrLaAlO4 single crystal substrate
5 x 3 mm
5 x 5 mm
6.35x6.35mm
10x5mm
10x10mm
12.7x12.7mm
Thickness of SrLaAlO4 single crystal substrate
0.5mm
Surface of SrLaAlO4 single crystal substrate
One side polished or both sides polished
Contact Person: Ms. Linda
Tel: +86-19945681435
Address: Rm 1712-1715, No.88, Sibao Rd, Shanghai , China